IRFZ48V DATASHEET PDF

IRFZ48V DATASHEET PDF

IRFZ48V Transistor Datasheet, IRFZ48V Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRFZ48V MOSFET N-CH 60V 72A TOAB International Rectifier datasheet pdf data sheet FREE from Datasheet (data sheet) search for. IRFZ48V datasheet, IRFZ48V pdf, IRFZ48V data sheet, datasheet, data sheet, pdf , International Rectifier, 60V Single N-Channel HEXFET Power MOSFET in a.

Author: Kigakasa Godal
Country: Turks & Caicos Islands
Language: English (Spanish)
Genre: Music
Published (Last): 24 September 2007
Pages: 446
PDF File Size: 7.32 Mb
ePub File Size: 19.99 Mb
ISBN: 574-8-24115-506-7
Downloads: 83396
Price: Free* [*Free Regsitration Required]
Uploader: Tojar

I S Continuous Source Current. Products may not be exactly the same and it is user’s responsibility to verify details for acceptable subsitution.

IRFZ48V 데이터시트(PDF) – Kersemi Electronic Co., Ltd.

The cross reference represents the closest match tomatch in all cases. Case-to-Sink, Flat, Greased Surface.

C iss Input Capacitance. Hammond is not responsibile for cross reference errors. Although due and responsible care has been exercised in compiling this cross referenceclerical andnumber is not found in this cross reference guide, one or a combination of the following exists: Abracon will not be liable any.

  BTA06 - 600 T PDF

Sinformation and cross reference listings, go to www. Q rr Reverse Recovery Charge. This Cross Reference is a guide only. TO package thermal resistance Text: The low thermal resistance and. L S Internal Source Inductance.

IRFZ48V 데이터시트(PDF) – International Rectifier

Mounting torque, or M3 srew. Cross ReferenceV1.

Rectifier utilize advanced processing techniques to achieve. The TO package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. C rss Reverse Transfer Capacitance.

The cross reference represents the closest. International Rectifier Electronic Components Datasheet. Source-Drain Ratings and Characteristics. Soldering Temperature, for 10 seconds.

IRFZ48V Datasheet PDF

No abstract text available Text: The TO package is universally preferred for all. Previous 1 2 See Figure 12 2 www.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

  ALLGEMEINE STAATSLEHRE JELLINEK PDF

C oss Output Capacitance.

The low thermal resistance and low package cost of the TO contribute to its wide acceptance throughout the industry. Allen-Bradley cat mn Abstract: Basic interchangeability with varyingdue and responsible care has been exercised in compiling this cross referenceclerical andnumber is not found in this cross reference guide, one or a combination of the following exists: Phonealkaline batteries For the most up-to-date information and cross reference listings, go tocross reference listings, go to www.

View PDF for Mobile. Fit, form andcross reference guide one or a combination of the following exists: L D Internal Drain Inductance.