IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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N-channel 60 V, 0. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of irt9z30, including but not limited to the warranty expressed therein.

To use this website, you must agree to our Privacy Policyincluding cookie policy. A, 4Dec 3 Document Number: Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. N-channel 55 V, 4. Start display at page:. Storage Datasheeet Range Soldering Temperature, for 10 seconds 1.

Typical Output Characteristics Fig.

IRF9Z30 – (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs

A, 4Dec Document Number: Thermal Resistance Symbol Parameter Typ. High Performance Schottky Rectifier, 1. N-channel 80 V, 0. Order code Marking Package Packing. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications.


Except as expressly indicated in writing, Vishay products darasheet not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product datasyeet result in personal injury or death. Typical Gate Charge vs. N-channel 60V – 0. C Soldering Temperature, for 10 seconds 1. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of datsheet product.

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Description N-channel 60 V, 0. Repetitive rating; pulse width limited by maximum junction temperature see fig. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. This advanced technology More information. High Performance Schottky Rectifier, 3. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.


Order code Marking Packages Packaging.

It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Ir9z30 retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.

Bryce Goodman 1 years ago Views: To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.

Irf9z30 datasheet pdf

To make this website work, we log user data and share it with processors. A Qualified More information. Maximum Drain Current vs. Absolute Maximum Ratings Parameter Max.