BUAF Transistor Datasheet pdf, BUAF Equivalent. Parameters and Characteristics. isc website: isc & iscsemi is registered trademark. 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter. BUAF STMicroelectronics Bipolar Transistors – BJT NPN Power Transistor datasheet, inventory, & pricing.

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Total Power Dissipation upto T.

BU508AF Datasheet, Equivalent, Cross Reference Search

All diminsions in mm. CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. The product information and the selection guides facilitate selection of the CDIL’s Discrete Semiconductor Device s best suited for application in your product s as per your requirement. Distributor Name Region Stock Min. Key Features Fully insulated power package U. Buy Direct Add to cart. CDIL however, does not assume responsibility for inaccuracies or incomplete information.


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BUAF NTE Equivalent NTE TRANSISTOR NPN SILIC – Wholesale Electronics

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Collector Emitter Sustaining Voltage. Base Emitter Saturation Voltage. Product is in volume production only to support customers ongoing production.

Product is in volume production Evaluation: Collector Cut off Current. Product is in volume production.

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CDIL is a registered Trademark of. Selectors Simulators and Models. Media Subscription Media Contacts. Please contact our sales support for information on specific devices. No commitment taken to design or datadheet NRND: The BUAF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.


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BU508AF Datasheet

Not Recommended for New Design. Search field Part name Part description. Marketing proposal for customer feedback. Collector Emitter Saturation Voltage.