BS N-channel Enhancement Mode Field Effect Transistor. Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS. BS Transistor Datasheet, BS Equivalent, PDF Data Sheets. Type Designator: BS MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS/D TMOS FET Switching N Channel Enhancement BS October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Please see the information tables in this datasheet for details. Power mosfet.
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Bcbc series low power bipolar transistors page 3 v1. BOM, Gerber, user manual, schematic, test procedures, etc. This Agreement may not be amended except in writing signed by an authorized representative of cet of the parties hereto. June fairchild semiconductor corporation bss rev gw bss nchannel logic level enhancement mode field effect transistor general description.
Bs170 fet datasheet filetype pdf
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Aodaoi ba170 enhancement mode field effect. Parameter symbol maximum units absolute maximum ratings t c25c unless otherwise noted aodaoi pchannel enhancement mode field effect transistor features vds v 40v.
BS Single N-Channel Small Signal MOSFET 60V, mA, 5Ω
Motorola tmos fet switchingnchannelenhancement,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Your request has been submitted for approval.
Normalized effective transient thermal impedance, junctiontoambient toaa, bs only normalized effective transient thermal impedance t 1 square wave pulse duration sec.
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Parameter symbol 2n 2n vqj vqp vqjp bs unit drainsource voltage v ds 60 60 60 60 60 gatesource voltage nonrepetitive v. Neither this Agreement, datashee any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent of ON Semiconductor, and any attempt to ty;e so in violation of the foregoing shall be null and void.
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