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Input port partially matched For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit?
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This data represents package part performances, and does not contain test fixture losses. Typical IM3 level and Ids vs. Typical S11 over temperature Figure Broadband Wireless Access including Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device.
Vofs can be measured at a single reference temperature. Typical Gain and Reverse Isolation Figure 2. The drift error will be less than 0. This method gives an error due to temperature drift of less than 0.
This method gives an error close to the method ammx. These ratings apply to each individual FET 5.
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Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp.
Typical IM3 level vs. A single DC gate supply connected to Vg will anmc all gain stages. Small signal Gain of 18dB?
Minor improvements in performance are possible depending on the application.
Junction operating temperature will directly affect the device MTTF. Data subject to change. Wide Frequency Range GHz?
Frequency range 6 to 18 GHz? Typical Akmc over temperature Figure An optional output power detector network is also provided. Integrated RF power detector? There are three methods to calculate Vofs: In a finalized package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal.
Electro Discharge Damage and Control.
AMMC-6408 6-18 GHz 1W Power Amplifier
Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure Observe Precautions for handling electrostatic sensitive devices. A typical measured detector voltage versus output power at 18GHz is shown Figure Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9.
The drain bias voltage range is 3 to 5V. The bonding diagram for the recommended assembly is shown in Figure Typical ESD diode current versus diode voltage for connected diodes in series Figure Operation in excess of any one of these conditions may result in permanent damage to this device.
For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Negative supply is used for the DC gate biasing.