2N5202 DATASHEET PDF

2N5202 DATASHEET PDF

2N High-Speed,. Silicon N-P-N. TELEPHONE: () () FAX: () MAXIMUM RATINGS, Absolute-Maximum Values. 2N NPN Transistor: 50v, 4a. Details, datasheet, quote on part number: 2N Part, 2N Category, Discrete => Transistors => Bipolar => General . 2N from Solitron Devices, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.

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We use advanced technologies to provide innovative and cost-effective solutions to our commercial and government customers in more than countries, and we are committed to providing products, systems, and services of the highest quality. Otherwise this mode generates a square wave output. XHCL shown at 2. Extra Value Screening Linear product with extra value screening as an X added to the standard type number in the price list, and is also branded as such. These types can be driven directly from integrated circuits.

It is commanded by a digital signal to pass turn-on or block turn-off the signal.

2N5202 Datasheet PDF – ETC

YHCL shown at 2. Rugged Series devices are identified by the suffix letter R following the type number. Actual value wil vary. Devices must be ordered in multiples ol quantities listed below.

Leakage of hold capacitor Hold Step Error: Signal Processing Device Type: Three-State Output Current pA: Shinjuku Daiichi Seimei Bldg. Consult factory for availability. Enhanced replacement for the AD at a lower cost. Leadless chip carrier S: V33CH8 20 26 1. Logic level Gate D: A n-p-n 8 45 min. Reference to products of other manufacturers are solely for convenience of comparison and do not imply total equivalency of design, performance, or otherwise.

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Used for extremely long time delays. Low leakage threshold and trigger inputs allow use of higher impedance RC timing components for extra long time delay. Very high speed Temperature 2: Paragraph 1 2 1 – 3 ate non-compliant to Mtl-Std Plastic Leaded Chip Carrier Q: Input offset voltage may also be defined for the case where tow equal resistances are inserted in series with the input leads.

Product portfolio includes devices for analog signal processing, digital signal processing, data conversion, interface, logic, microcontrollers, microprocessors, microprocessor peripherals, power conditioning, and intelligent power.

2N Datasheet PDF ( Pinout ) – HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS

Function Selection Chart Continued No. Complex Singapore TEL: These are n-channel enhancement mode polysilicon gate power field effect transistors designed for applications such as switching regulators, switching dstasheet, motor and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. All specifications in this product guide are applicable only to packaged products; specifications for die are available upon request.

Output Drive Current mA: Max Peak Surge Current Itsm – Maximum non-repetitive current which may be allowed to flow for the time state. Livonia, Ml TEL: Leadless chip carriers LCC 4P: Leadless Chip Carrier S: The division is the number one based on revenue supplier of integrated circuits to the U.

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Average power dissipation of transients not to exceed 0. CK, CJ 2. IOU 92 4. MS – Fully compliant with Dahasheet – 18 volts max. Package BDX33D n-p-n 10 min. Temperature, Pressure, Flow, Vibration, Sonic, etc.

2N5202 Datasheet

Using state-of-the-art integrated circuit processing techniques these Rugged MOSFETs provide superior performance in inductive switching applications. FindLay, Ohio; Mountaintop, Pennsylvania; Somerville, New Jersey; Dundalk, Ireland; Singapore; Kuala Lumpur, Malaysia Semiconductor Products Division designs, manufactures, and markets discrete semiconductors and analog, digital, and mixed-signal integrated circuits for signal -processing and power-control applications for both commercial and military uses.

Ratings and characteristics data for these types differ in some aspects from the standardized data for B-series types. Accordingly, the reader is cautioned to verify that information in this publication is current before placing orders. The difference between a Diode and a Rectifier is that a Rectifier is usually rated at a breakdown voltage of greater than 50 volts and has a power rating that is greater than 0. Hermetic Seal Tests 5. JANTX types receive percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling.