20N60A4 DATASHEET PDF

20N60A4 DATASHEET PDF

20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.

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The information is based on measurements of a. Circuits that leave the gate. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband.

Exceeding the rated V GE 02n60a4 result in permanent damage to the oxide layer in the gate region.

20N60A4 Datasheet(PDF) – Fairchild Semiconductor

Prior to assembly into a circuit, all leads should be kept. Gate Termination – The gates of these devices are essentially capacitors. If gate protection is required an external Zener is recommended.

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The operating frequency plot Figure 3 of a typical. Devices should never be inserted into or removed from circuits with power on. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge.

Other definitions are possible. Figure 3 is presented as a guide for estimating device. The information is based on measurements of a 20n0a4 device and is bounded by the maximum rated junction temperature.

Operating frequency information for a typical device. All tail losses are included in the calculation for E OFF ; i. Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit dataaheet Figures 6, 7, 8, 9 and The sum of device switching and conduction losses must not exceed P D.

When devices are removed by hand from their carriers. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application.

Insulated Gate Bipolar Transistors are susceptible to. When handling these devices.

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Home – IC Supply – Link. IGBTs can be handled safely if the following basic precautions are taken: These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. All tail losses are included in the.

20N60A40 DATASHEET

Gate Protection – These datahseet do not have an internal monolithic Zener diode from gate to emitter. The sum datzsheet device switching and conduction losses must not. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. Circuits that leave the gate open-circuited or floating should be avoided. Tips of soldering irons should be grounded. Devices should never be inserted into or removed from.

Device turn-off delay can establish an additional frequency. With proper handling and application.

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